DMP3056LDM
Diodes Incorporated
ENHANCEMENT MODE MOSFETDMP3056LDM
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low RDS(ON): • 45mΩ @VGS = -10V • 65mΩ @VGS = -4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Gre
DMP3056L
P-CHANNEL ENHANCEMENT MODE MOSFETProduct Summary
BVDSS -30V
RDS(ON) MAX
50mΩ @ VGS =-10V 70mΩ @ VGS =-4.5V
ID MAX TA = +25°C
-4.3A -3.7A
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for
Diodes
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DMP3056LSS
ENHANCEMENT MODE MOSFETDMP3056LSS
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• Low On-Resistance • 45mΩ @ VGS = -10V • 65mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Le
Diodes Incorporated
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DMP3056LSD
ENHANCEMENT MODE MOSFETDMP3056LSD
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• • Dual P-Channel MOSFET Low On-Resistance • 45mΩ @ VGS = -10V • 65mΩ @ VGS = -4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching S
Diodes Incorporated
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