Datasheet DMP10H400SEQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMP10H400SEQ	P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V RDS(ON) Max 250m @ VGS = -10V 300m @ VGS = -4.5V ID TA = +25C -2.3A -2.1A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use	Diodes

DMP10H400 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMP10H400SK3	100V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT DMP10H400SK3 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -100V RDS(on) max 240mΩ @ VGS = -10V 300mΩ @ VGS = -4.5V ID TC = +25°C -9A -8A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and	Diodes
DMP10H400SEQ	P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -100V RDS(ON) Max 250m @ VGS = -10V 300m @ VGS = -4.5V ID TA = +25C -2.3A -2.1A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP	Diodes
DMP10H400SE	P-CHANNEL ENHANCEMENT MODE MOSFET N E AWDPVRAONDCUECITN F O R M A T I O N Product Summary BVDSS -100V RDS(ON) Max 250m @ VGS = -10V 300m @ VGS = -4.5V ID TA = +25C -2.3A -2.1A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, mak	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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