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NEW PRODUCT DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 2Ω @ VGS = 5V 2.5Ω @ VGS = 2.5V ID TA = +25°C 300 mA 200 mA Features and Benefits • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capac
NEW PRODUCT Product Summary V(BR)DSS 50V RDS(ON) 2.0Ω @ VGS = 10V 3.0Ω @ VGS = 5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high effic
NEW PRODUCT DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and ye
NEW PRODUCT DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 360mA 250mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet m
NEW PRODUCT DMN53D0L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 500 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet main
NEW PRODUCT DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 50V RDS(ON) 1.6Ω @ VGS = 10V 2.5Ω @ VGS = 4.5V ID TA = +25°C 350 mA 200 mA Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet mai
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