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Datasheet DMN3730U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | DMN3730U | N-CHANNEL ENHANCEMENT MODE MOSFET A Product Line of Diodes Incorporated
DMN3730U
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
V(BR)DSS 30V
Max RDS(on)
460mΩ @ VGS= 4.5V 560mΩ @ VGS= 2.5V
ID Max (Note 5) TA = 25°C 0.94A
0.85A
Features and Benefits
• Low VGS(th), can be driven directly from a battery • Lo |
 Diodes |
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| 2 | DMN3730UFB | 30V N-CHANNEL ENHANCEMENT MODE MOSFET A Product Line of Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A
Features and Benefits
• • • • • • • • 0.5mm ultra low profile package for thin application 2 0. |
Diodes |
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| 1 | DMN3730UFB4 | 30V N-CHANNEL ENHANCEMENT MODE MOSFET DMN3730UFB4
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS RDS(on) 460mΩ @ VGS= 4.5V 30V 560mΩ @ VGS= 2.5V ID TA = 25°C 0.9A 0.7A
Features and Benefits
• • • • • • • • 0.4mm ultra low profile package for thin application 2 0.6mm package footprint, 10 times smalle |
Diodes |
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