DMN30H4D0L
Diodes
N-CHANNEL ENHANCEMENT MODE MOSFETNEW PRODUCT
Product Summary
V(BR)DSS 300V
RDS(ON)
4Ω @ VGS = 10V 4Ω @ VGS = 4.5V
ID TA = +25°C
0.25A
0.25A
Description and Applications
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superi
DMN30H4D0LFDE
Diodes
N-CHANNEL ENHANCEMENT MODE MOSFETNEW PRODUCT
DMN30H4D0LFDE
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 300V
RDS(ON)
4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V
ID TA = +25°C
0.55A
0.55A
0.44A
Description
This new generation MOSFET has been designed to minimize t