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Datasheet DMN3025LFDF Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN3025LFDF   30V N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary BVDSS 30V RDS(ON) max 20.5mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID max TA = +25°C 8.3A 7.4A DMN3025LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low On-R
 Diodes
Diodes		 datasheet DMN3025LFDF pdf

DMN3025L Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN3025LSS

N-CHANNEL ENHANCEMENT MODE MOSFET

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMN3025LSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON)max 20mΩ @ VGS = 10V 31mΩ @ VGS = 4.5V ID max TA = +25°C 7.2A 5.8A Description This MOSFET has been designed to minimize the on-state resistance (RD
 Diodes
Diodes		 datasheet pdf - Diodes
DMN3025LFG

N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT DMN3025LFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) Max 18mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V ID Max TA = +25°C 7.5A 6.1A Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and ye
 Diodes
Diodes		 datasheet pdf - Diodes
DMN3025LFDF

30V N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION Product Summary BVDSS 30V RDS(ON) max 20.5mΩ @ VGS = 10V 30mΩ @ VGS = 4.5V ID max TA = +25°C 8.3A 7.4A DMN3025LFDF 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint
Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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