Datasheet DMN3016LDN Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN3016LDN	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANNCEEWD IPNRFOODRUMCATTION DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS N-Channel 30V RDS(ON) max 20mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V ID MAX TA = +25°C 7.3A 6.7A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) a	Diodes

DMN3016 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN3016LFDF	N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INNEFWORPRMOADTIUOCNT DMN3016LFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID Max TA = 25°C 10A 8.5A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(	Diodes
DMN3016LSS	N-CHANNEL ENHANCEMENT MODE MOSFET ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMN3016LSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) max 12mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TA = 25°C 10.3 A 9.3 A Description This MOSFET has been designed to minimize the on-state resista	Diodes
DMN3016LPS	N-CHANNEL ENHANCEMENT MODE MOSFET ANDEV AWNPNCREEOWIDNPUFRCOOTRDMUACTTI O N DMN3016LPS 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 30V RDS(ON) max 12m @ VGS = 10V 16m @ VGS = 4.5V ID TA = +25°C 10.8A 9.5A Description and Applications This new generation MOSFET has been de	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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