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Datasheet DMN2400UFDQ Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 DMN2400UFDQ   N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Description and Applications This MOSFET is designed to minimize the
 Diodes
Diodes		 datasheet DMN2400UFDQ pdf

DMN2400U Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
DMN2400UV

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected up to 2kV • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 standard
 Diodes
Diodes		 datasheet pdf - Diodes
DMN2400UFDQ

N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2400UFDQ N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 20V RDS(ON) 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V ID TA = +25°C 0.9A 0.7A 0.5A 0.3A Description and Applications This MOSFET is desi
 Diodes
Diodes		 datasheet pdf - Diodes
DMN2400UFB

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V 0.75Ω @ VGS = 2.5V ID max TA = +25°C 0.75A 0.63A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it idea
 Diodes
Diodes		 datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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