DMN2230UQ
Diodes
N-CHANNEL ENHANCEMENT MODE MOSFETNEW PRODUCT
Product Summary
BVDSS 20V
RDS(ON) max 110mΩ @ VGS = 4.5V 145mΩ @ VGS = 2.5V 230mΩ @ VGS = 1.8V
ID max TA = +25°C
2A
1.7A
1.3A
DMN2230UQ
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance Low Gate Threshold Voltage
DMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORDMN2230U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
• Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Le
Diodes
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DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFETProduct specification
DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance • 110 mΩ @ VGS = 4.5V • 145 mΩ @ VGS = 2.5V • 230 mΩ @ VGS = 1.8V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead, Halogen and Antimony Free, RoHS Compliant "Green" D
TY Semiconductor
PDF