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DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 20V RDS(ON) max 20mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V ID max TA = +25°C 6.8A 6.5A 6.1A 5.2A Description This new generation MOSFET has been designed to minimize the onstat
N E AWDPVRAONDCUECITN F O R M A T I O N DMN2028UFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 20.2m @ VGS = 4.5V 23.5m @ VGS = 2.5V ID TA = +25°C 7.5A 7.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON
Product Summary BVDSS 20V RDS(ON) Max 25mΩ @ VGS = 4.5V 29mΩ @ VGS = 2.5V 39mΩ @ VGS = 1.8V 95mΩ @ VGS = 1.5V ID Max TA = +25°C 7.9A 7.2A 6.1A 4.0A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making i
ADVANCE INFORMATION Product Summary V(BR)DSS 20V RDS(on) max 20mΩ @ VGS= 4.5V 28mΩ @ VGS= 2.5V ID max TA = +25°C (Note 6) 9.8A 8.3A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, maki
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