Datasheet DMN2016LFG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMN2016LFG	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V ID TA = 25°C 5.2A 4.0A Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching S	Diodes

DMN2016 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMN2016UTS	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DMN2016UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 2KV "Green" Device (Note 2) Qualified	Diodes
DMN2016LHAB	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NAEDWVPARNOCDEUICNTF O R M A T I O N DMN2016LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on)max 15.5mΩ @ VGS = 4.5V 16.5mΩ @ VGS = 4.0V 19mΩ @ VGS = 3.1V 20mΩ @ VGS = 2.5V 30mΩ @ VGS = 1.8V ID TA = +25°C 7.5A 7.3A 6.9A 6.7A 5.4A Feature	Diodes
DMN2016LFG	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 18mΩ @ VGS = 4.5V 30mΩ @ VGS = 1.8V ID TA = 25°C 5.2A 4.0A Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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