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DMN2004WKQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 550 mΩ @ VGS = 4.5V ID TC = +25°C 0.54 mA Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP an
SPICE MODEL: DMN2004VK DMN2004VK Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ul
SPICE MODEL: DMN2004WK Lead-free Green DMN2004WK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT · · · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS
NEW PRODUCT Product Summary V(BR)DSS 20V RDS(ON) max 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. A
SPICE MODEL: DMN2004K Lead-free Green DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ADVANCED NEW INFORMATION PRODUCT · · · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead
NEW PRODUCT Product Summary V(BR)DSS 20V RDS(on) max 0.55Ω @ VGS = 4.5V ID TA = +25°C 540mA Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. A
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