DMG4800LK3
Diodes
N-CHANNEL ENHANCEMENT MODE MOSFETNEW PRODUCT
Features
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to A
DMG4800LFG
N-CHANNEL ENHANCEMENT MODE MOSFETNEW PRODUCT
Features
• Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 1) • "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High Reliability
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DMG4800LFG
N-CHANNE
Diodes
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DMG4800LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETProduct Summary
V(BR)DSS 30V
RDS(on) max
16mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V
ID max TA = +25°C
9.8A
8.4A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power manageme
Diodes
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