|
ADVANCE INFORMATION DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(ON) 50mΩ @ VGS = -10V 72mΩ @ VGS = -4.5V ID TA = 25°C -4.0A -3.3A Features and Benefits • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
NEW PRODUCT DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(ON) Max 25mΩ @ VGS = 10V 35mΩ @ VGS = 4.5V ID Max TA = +25°C 5.8A 4.8A Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage To
DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS 30V RDS(ON) 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID TA = +25°C 4A 3A 2A Features • Low On-Resistance: • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed
NEW PRODUCT DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(on) max 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V ID TA = 25°C -3.7A -3.3A -2.7A Description This new generation Small-Signal enhancement mode MOSFET features low on-resistance and
Product specification DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) 50mΩ @ VGS = -10V ID TA = 25°C -4.0A -3.3A Features and Benefits • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead-Free Finis
Product specification DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -30V RDS(on) max 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V ID TA = 25°C -3.7A -3.3A -2.7A Features • • • • • • Low Input Capacitance Low On-Resistance Low Input/Output Lea
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |