Datasheet DMG1013UWQ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	DMG1013UWQ	P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q	Diodes

DMG1013 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
DMG1013UW	P-CHANNEL ENHANCEMENT MODE MOSFET DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and	Diodes
DMG1013TQ	20V P-CHANNEL ENHANCEMENT MODE MOSFET DMG1013TQ 20V P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary BVDSS -20V RDS(ON) Max 700mΩ @ VGS = -4.5V 900mΩ @ VGS = -2.5V 1300mΩ @ VGS = -1.8V ID Max TA = +25°C -460mA -420mA -350mA Description and Applications This MOSFET is designed to meet the string	Diodes
DMG1013UWQ	P-CHANNEL ENHANCEMENT MODE MOSFET Features  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) �	Diodes

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Número de pieza	Descripción	Fabricantes	PDF
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