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RED LASER DIODE DL-LS1034 Tentative Features • Short wavelength : 635 nm (Typ.) • High output power : 20 mW CW • Low threshold current : Ith = 40 mA (Typ.) • Low operating voltage : Vop = 2.3 V (Typ.) Package Ver.1 Oct. 2001 Tolerance : ± 0.2 (Unit : mm) 0 ø9.0- 0.03
RED LASER DIODE DL-LS1032 Features • Short wavelength : 635 nm (Typ.) • High output power : 10 mW CW • Low threshold current : Ith =40 mA (Typ.) • Small package :ø5.6mm Package Ver.1 Oct. 2001 Tolerance : ± 0.2 (Unit : mm) 0 ø5.6- 0.025 ø4.4 ø3.55± 0.1 ø1.6 Eff
RED LASER DIODE DL-LS1018 Tentative Features • Wavelength : 675 nm (Typ.) • Low threshold current : Ith = 40 mA (Typ.) • Beam Number : 2 • Beam Distance : 100µm • Small package : ø5.6mm Package Ver.1 July. 2001 Tolerance : ± 0.2 (Unit : mm) 0 ø5.6-0.025 ø4.4 ø3.
RED LASER DIODE Tentative DL-LS1061 Features • wavelength : 658 nm (Typ.) • High output power :100 mW at 70°C (pulse) • Low threshold current : Ith = 35 mA (Typ.) • Small package : ø5.6 mm • TE mode Applications Package Ver.1 Mar. 2002 Tolerance : ± 0.2 (Unit : mm)
RED LASER DIODE Tentative DL-LS1045 Features • wavelength : 658 nm (Typ.) • High output power :80 mW at 70°C (pulse) • Low threshold current : Ith = 35 mA (Typ.) • Small package : ø5.6 mm • TE mode Applications Package Ver.3 Oct. 2001 Tolerance : ± 0.2 (Unit : mm)
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