DFP830
DnI
N-Channel MOSFET
DFP830
N-Channel MOSFET
Features
RDS(on) (Max 1.5 )@VGS=10V
1.Gate 2.Drain
Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
BVDSS = 500V RDS(ON) = 1.5 ohm ID = 4.5A
3.Source
General Description
DFP85N06
N-Channel MOSFET
DFP85N06
N-Channel MOSFET
Features
Low RDS(on) (0.010 )@VGS=10V Low Gate Charge (Typical 96nC) Low Crss (Typical 215pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0.010 ohm ID = 85A
General
DnI
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DFP840
N-Channel MOSFET
DFP840
N-Channel MOSFET
Features
RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS = 500V
1.Gate
RDS(ON) = 0.85 ohm ID = 8A
3.Source
General Description
This N-channel enhancement mode field-e
DnI
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