D864
Inchange Semiconductor
NPN Transistor - 2SD864INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collec
D8JBB60V
Bridge DiodeSIP
D8JBB60V
600V8A
特長
煙高耐圧 煙低背タイプ 煙 UL142422
Feature
煙 HighVoltage 煙 Low Height 煙 UL142422
BridgeDiode
■外観図 OUTLINE Package:JB
D8JB 60 0000
Unit:mm
外形図については新電元 Webサイトをご参照下さい。捺印表示につい
SHINDENGEN
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D8FD60LUS
Fast Recovery DiodeSingle
FastRecoveryDiode
D8FD60LUS
■外観図 OUTLINE Package:FD
600V8A
特長 煙 SMD
煙高耐圧 煙低ノイズ
Feature
煙 SMD 煙 HighVoltage 煙 LowNoise
0000
8FD60LUS
Unit:mm
外形図については新電元 Webサイトをご参照下さい。捺印表示については 捺印
SHINDENGEN
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D8SB100
SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIERSHANGHAI SUNRISE ELECTRONICS CO., LTD. D8SB10 THRU D8SB100
SINGLE PHASE GLASS PASSIVATED SIP BRIDGE RECTIFIER
VOLTAGE: 100 TO 1000V CURRENT: 8.0A
FEATURES
• Glass passivated junction chip • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique •
Shanghai Sunrise Electronics
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