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SIP D50JCB80V 800V50A 特長 煙薄型 SIP 煙 ULE142422 Feature 煙 CompactSIP 煙 ULE142422 BridgeDiode ■外観図 OUTLINE Package:JC(4pin) SHINDENGEN 50JCB80 0000 Unit:mm 外形図については新電元 Webサイトをご参照下さい。捺印表示については �
TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 30MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN F G H K I J • SUITABLE FOR BROAD BAND APPLICATIONS • L
Bridge Diode D50XB80 800V 50A 特長 • 薄型 SIP パッケージ • UL E142422 • 高耐圧・高 IFSM • 大電流容量 • 高放熱伝導性 Feature • Thin-SIP • UL E142422 • High Voltage・Large IFSM • Large Io • High Thermal Radiation 大容量 シングルインライン型
TetraFET D5028UK METAL GATE RF SILICON FET MECHANICAL DATA C (2 pls) B G (typ) 2 1 H D 3 P (2 pls) A 5 4 E (4 pls) F I GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 175MHz PUSH–PULL FEATURES N M O J K • SIMPLIFIED AMPLIFIER DESIGN • SUI
SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD5076 DESCRIPTION www.data·sWheietht4uT.cOom-3PML package ·High breakdown voltage ·High speed switching APPLICATIONS ·Color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fi
TetraFET D5013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 A 1 F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE
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