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ADVANCED INFORMATION Product Summary VBR (min) 28V IPP (max) 50A IR (max) 100nA Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable application
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer rat
Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensi
SEMICONDUCTOR D2630D Series RRooHHSS Nell High Power Products Standard Recovery Diodes (Hockey PUK Version), 2630A FEATURES Wide current range High voltage ratings up to 2500V High surge current capabilities Diffused junction Hockey PUK version Case style DO-220AC(K-PUK), Nell’s D-type Capsule L
2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Preliminary Datasheet R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5
ADVANCE INFORMATION D26V0H1U2LP20 26V UNI-DIRECTIONAL TVS DIODE Product Summary VBR (min) 28V IPP (max) 9.5A IR (max) 100nA Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability m
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