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D2642 전자부품 데이터시트



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D2642  

Sanken electric
Sanken electric

D2642

NPN Transistor - 2SD2642

Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 100max 100max 110min 5000min∗ 2.5max 3.0max 60typ




관련 부품 D26 상세설명

D26V0H1U2LP16  

  
1 CHANNEL HIGH SURGE TVS DIODE

ADVANCED INFORMATION Product Summary VBR (min) 28V IPP (max) 50A IR (max) 100nA Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable application



Diodes
Diodes

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D2693  

  
Power Transistors

This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD2693, 2SD2693A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1724, 2SB1724A ■ Features • Wide safe oeration area • Satisfactory linearity of forward current transfer rat



Panasonic Semiconductor
Panasonic Semiconductor

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D2649  

  
NPN Triple Diffused Planar Silicon Transistor

Ordering number : ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. Package Dimensi



Sanyo Semicon Device
Sanyo Semicon Device

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D2630D  

  
Standard Recovery Diode

SEMICONDUCTOR D2630D Series RRooHHSS Nell High Power Products Standard Recovery Diodes (Hockey PUK Version), 2630A FEATURES Wide current range High voltage ratings up to 2500V High surge current capabilities Diffused junction Hockey PUK version Case style DO-220AC(K-PUK), Nell’s D-type Capsule L



nELL
nELL

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D2655  

  
NPN Transistor - 2SD2655

2SD2655 Silicon NPN Epitaxial Planer Low Frequency Power Amplifier Preliminary Datasheet R07DS0281EJ0400 Rev.4.00 Jan 10, 2014 Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5



Renesas
Renesas

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D26V0H1U2LP20  

  
26V UNI-DIRECTIONAL TVS DIODE

ADVANCE INFORMATION D26V0H1U2LP20 26V UNI-DIRECTIONAL TVS DIODE Product Summary VBR (min) 28V IPP (max) 9.5A IR (max) 100nA Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability m



Diodes
Diodes

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