D2250 전자부품 데이터시트

TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 2 6 3 4 C R F 5 A O Q N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED I P H G DBC3 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose

TetraFET D2231UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED 0.360 ± 0.

TetraFET D2229UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED 0.360 ± 0.

NEW PRODUCT Product Summary VBR Min 24V IPP Max 30A CT Typ 220pF Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellu

Features ■ ■ ■ Applications ■ ■ ■ ■ ■ ■ Thick film technology Fail safe Protection to ITU-T K.20 Analog Line Cards CPE (Customer Premises Equipment) DDS (Digital Data Systems) DLC (Digital Loop Carriers) T1/T3 Transmission Lines ISDN D22B Line Feed Resistor