파트넘버.co.kr D2206 데이터시트 검색

D2206 전자부품 데이터시트



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기능 검색 결과



D2206  

Toshiba
Toshiba

D2206

NPN Transistor - 2SD2206

2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC =




관련 부품 D22 상세설명

D2219  

  
NPN Transistor - 2SD2219

Ordering number:EN3364 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1468/2SD2219 30V/8A High-Speed Switching Applications Applications · Relay drivers, high-speed inverters, converters, etc. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VC



Sanyo
Sanyo

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D2219  

  
METAL GATE RF SILICON FET

TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A N 8 D 1 2 C B P 7 6 5 3 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES H K L J E F G M • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS PIN 5 – SOURCE



Seme LAB
Seme LAB

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D2254UK  

  
METAL GATE RF SILICON FET

TetraFET D2254UK METAL GATE RF SILICON FET MECHANICAL DATA B E D 8 1 7 6 3 4 2 C R A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SI



Seme LAB
Seme LAB

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D2218UK  

  
METAL GATE RF SILICON FET

TetraFET D2218UK METAL GATE RF SILICON FET MECHANICAL DATA C 2 A 3 B D ( 2 p ls ) GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz SINGLE ENDED FEATURES E 1 G H F • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DRAIN DP PIN 1 PIN 3 SOURCE GATE



Seme LAB
Seme LAB

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D2218  

  
NPN Transistor - 2SD2218

Ordering number:EN3363 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1467/2SD2218 General High-Current Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Micaless package facilitating mounting. · Low collector-to-emitter saturation voltage : VCE(



Sanyo
Sanyo

PDF



D2211  

  
METAL GATE RF SILICON FET

TetraFET D2211UK METAL GATE RF SILICON FET MECHANICAL DATA D B E 8 1 7 2 6 3 4 C R F 5 A O Q N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 7.2V – 1GHz SINGLE ENDED I P H G DBC3 Package PIN 1 Source PIN 2 Drain PIN 3 Drain PIN 4 Source DIM A B C D E F G H I J K L M N



Seme LAB
Seme LAB

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