|
|
Datasheet D2020UK Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | D2020UK | METAL GATE RF SILICON FET S a MECHANICAL atDATA .D w w w
A
e e h
U 4 t
m o .c
TetraFET
D2020UK
METAL GATE RF SILICON FET
N
8 7 6 5
1 2
C B P
D
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD |
Seme LAB |
|
3 | D2020UK-P | METAL GATE RF SILICON FET PR EL IM INA RY
S a MECHANICAL atDATA .D w w w e e h U 4 t
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • VERY LOW Crss
m o .c
TetraFET
D2020UK–P
METAL GATE RF SILICON FET
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
• SUITABLE FOR BROAD BAND APPLICATION |
Seme LAB |
|
2 | D2020UK.01 | METAL GATE RF SILICON FET S a MECHANICAL at DATA .D w w w
A
e e h
U 4 t
m o .c
TetraFET
D2020UK.01
METAL GATE RF SILICON FET
N
8 7 6 5
1 2
C B P
D
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BR |
Seme LAB |
|
1 | D2020UK.02 | METAL GATE RF SILICON FET S a MECHANICAL at DATA .D w w w
A
e e h
U 4 t
m o .c
TetraFET
D2020UK.02
METAL GATE RF SILICON FET
N
8 7 6 5
1 2
C B P
D
3 4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
H
K
L J E F G
M
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BR |
Seme LAB |
Esta página es del resultado de búsqueda del D2020UK. Si pulsa el resultado de búsqueda de D2020UK se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |