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TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURE
SHINDENGEN Super Fast Recovery Rectifiers Modules D200LC40B 400V 200A FEATURES High current capacity trr150ns Insulated Package APPLICATION Semiconductor Production Equipment Big Power Supply Factory Automation, Robot OUTLINE DIMENSIONS Case : MODULES Unit : mm RATINGS Absolute Maximum Ratings
TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURE
TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr
TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY
TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI
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