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D2002- 전자부품 데이터시트



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D2002-  

Shaoxing Silicore Technology
Shaoxing Silicore Technology

D2002-

Stereo Headphone Amplifier

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is b




관련 부품 D200 상세설명

D2008UK  

  
METAL GATE RF SILICON FET

TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURE



Seme LAB
Seme LAB

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D200LC40B  

  
Super Fast Recovery Rectifiers(400V 200A)

SHINDENGEN Super Fast Recovery Rectifiers Modules D200LC40B 400V 200A FEATURES High current capacity trr150ns Insulated Package APPLICATION Semiconductor Production Equipment Big Power Supply Factory Automation, Robot OUTLINE DIMENSIONS Case : MODULES Unit : mm RATINGS œAbsolute Maximum Ratings



Shindengen Electric Mfg.Co.Ltd
Shindengen Electric Mfg.Co.Ltd

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D2008  

  
METAL GATE RF SILICON FET

TetraFET D2008UK METAL GATE RF SILICON FET MECHANICAL DATA 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 400MHz SINGLE ENDED FEATURE



Seme LAB
Seme LAB

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D2005UK  

  
METAL GATE RF SILICON FET

TetraFET D2005UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr



Seme LAB
Seme LAB

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D2004UK  

  
METAL GATE RF SILICON FET

TetraFET D2004UK METAL GATE RF SILICON FET MECHANICAL DATA A K B (2 pls) E C 1 2 3 D 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN G (4 pls) F H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS • VERY



Seme LAB
Seme LAB

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D2003  

  
METAL GATE RF SILICON FET

TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI



Seme LAB
Seme LAB

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