D1716
NPN Transistor - 2SD1716INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1716
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161
APPLICATIONS ·Designed for high power amplifier a
Inchange Semiconductor
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D17CL
Manual
FCC Information
This equipment has been tested and found to comply with limits for a class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipmen
Hansol
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