D1769
Sanken electric
NPN Transistor - 2SD1769Darlington
2SD1769
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.
D1716
NPN Transistor - 2SD1716INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1716
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161
APPLICATIONS ·Designed for high power amplifier a
Inchange Semiconductor
PDF
D17CL
Manual
FCC Information
This equipment has been tested and found to comply with limits for a class B digital device, pursuant to Part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference in a residential installation. This equipmen
Hansol
PDF