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ADVANCED INFORMATION D14V0S1U2WS 1 CHANNEL UNIDIRECTIONAL TVS Product Summary VBR Min 14.5V Ipp Max 50A Cin Typ 360pF Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes i
ADVANCED INFORMATION Product Summary VBR min 14.5V Ipp max 25A CIN typ 160pF Description This new generation TVS is designed to protect sensitive electronics from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications s
Technische Information / Technical Information Schnelle Diode Fast Diode D 1441 SX 60T S Vorläufige Daten . Preliminary Data . Features • Specially designed for oeration with small snubber • Low losses, soft recovery • 140°C maximum junction temperature • Electroact
Power Transistors 2SD1475 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 4.2±0.2 s Features q q q q High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power di
19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight (reference value) + 0.13 DP-16 Conforms Conforms 1.07 g Cautions 1. Hitachi neither warrants nor grants license
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