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European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 126 A 15 6,5 5,5 14 SW27 40 18 M12 Typ D126A Schaltsymbol Kathode Anschlußlasche Gehäuseboden Gehäuseboden Anschlußlasche D126B 2 8 Anode 58 ±2 VW K July 1996
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switchin
Power Transistors 2SD1262, 2SD1262A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB939 and 2SB939A 8.5±0.2 6.0±0.5 Unit: mm 3.4±0.3 1.0±0.1 10.0±0.3 1.5±0.1 s Features q High foward current transfer ratio hFE q High-speed switchin
European PowerSemiconductor and Electronics Company GmbH + Co. KG Leistungsgleichrichterdioden Power Rectifier Diodes D 126 A 15 6,5 5,5 14 SW27 40 18 M12 Typ D126A Schaltsymbol Kathode Anschlußlasche Gehäuseboden Gehäuseboden Anschlußlasche D126B 2 8 Anode 58 ±2 VW K July 1996
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