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Datasheet D1170 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | D1170 | NPN Transistor - 2SD1170
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1170
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage: VCE(sat |
Inchange Semiconductor |
D1 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
D1555 | NPN Transistor - 2SD1555 |
Wing Shing Computer Components |
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D13007K | Low-frequency amplification shell rated bipolar transistors |
ETC |
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D13009K | NPN Bipolar High-power Transistor |
ETC |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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