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Datasheet CZT5401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CZT5401 | PNP Transistor RoHS CZT5401
CZT5401 TRANSISTOR (PNP)
SOT-223
FEATURES
DPower dissipation
TPCM: 1 W (Tamb=25℃)
Collector current
.,LICM: -0.6 A
Collector-base voltage
V(BR)CBO: -160
V
OOperating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
1. BASE 2. COLLECTOR 3. EMITTER
CELECTRIC |
 WEJ |
 |
| 4 | CZT5401 | PNP Silicon Transistor SMD Type
Transistors
PNP Silicon Transistor CZT5401
0.1max +0.050.90
-0.05
+0.151.65 -0.15
Features
SOT-223
6.50+0.2 -0.2
Unit: mm 3.50+0.2
-0.2
3.00+0.1 -0.1 4
0.90+0.2 -0.2
7.00+0.3 -0.3
123 2.9 4.6
0.70+0.1 -0.1
1 Base 2 Collector 3 Emitter 4 Collector
Absolute Maximum Ratings Ta = 25 |
 Kexin |
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| 3 | CZT5401 | PNP Transistor Elektronische Bauelemente
CZT5401
PNP Transistor Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The CZT5401 is designed for general purpose applications requiring high
breakdown voltages.
5401
MAXIMUM RATINGS* (Tamb =25oC , unless otherwise specified)
REF.
A C D E I H
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 SeCoS |
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| 2 | CZT5401 | PNP SILICON TRANSISTOR CZT5401
PNP SILICON TRANSISTOR
Central
DESCRIPTION:
TM
Semiconductor Corp.
The CENTRAL SEMICONDUCTOR CZT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.
SOT-223 CASE MA |
 Central Semiconductor Corp |
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