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CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Embedded ECC for single-bit error correction[1] ■ Low active and standby currents ❐
fax id: 1075 CY7C1020V 32K x 16 Static RAM Features • 3.3V operation (3.0V - 3.6V) • High speed — tAA = 10 ns • Low active power — 540 mW (max., 12 ns) • Very Low standby power — 330 µW (max., “L” version) • Automatic power-down when deselected • Indepen
CY7C1020DV33 512 K (32 K x 16) Static RAM A8 A9 A10 A11 A12 A13 A14 Features ■ Pin-and function-compatible with CY7C1020CV33 ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3 mA ■ 2.0 V Data retention ■ Automatic power-down wh
CY7C1020CV33 512 K (32 K × 16) Static RAM 512 K (32 K × 16) Static RAM Features ■ Pin- and function-compatible with CY7C1020CV33 ■ Temperature Ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive: –40 °C to 125 °C ■ High speed ❐ tAA = 10 ns ■ CMO
049BV33 CY7C1049BV33 512K x 8 Static RAM Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660 µW at 2.0V retention) • Automatic power-down when deselect
CY7C1020CV26 512-Kbit (32 K × 16) Static RAM 512-Kbit (32 K × 16) Static RAM Features ■ Temperature range ❐ Automotive: –40 °C to 125 °C ■ High speed ❐ tAA = 15 ns ■ Optimized voltage range: 2.5 V to 2.7 V ■ Automatic power down when deselected ■ Independent control of upper and
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