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Datasheet CY7C107 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CY7C107 | (CY7C107 / CY7C1007) 1M x 1 Static RAM
CY7C107 CY7C1007
1M x 1 Static RAM
Features
• High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention (optional) — 100 µW • Automatic power-down when deselected • TTL-compatibl |
 Cypress Semiconductor |
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| 4 | CY7C1071DV33 | 32-Mbit (2M x 16) Static RAM CY7C1071DV33
32-Mbit (2 M × 16) Static RAM
32-Mbit (2 M × 16) Static RAM
Features
■ High speed ❐ tAA = 12 ns
■ Low active power ❐ ICC = 250 mA at 83.3 MHz
■ Low Complementary Metal Oxide Semiconductor (CMOS) standby power ❐ ISB2 = 50 mA
■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V |
Cypress Semiconductor |
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| 3 | CY7C1079DV33 | 32-Mbit (4 M x 8) Static RAM CY7C1079DV33
32-Mbit (4 M × 8) Static RAM
32-Mbit (4 M × 8) Static RAM
Features
■ High Speed ❐ tAA = 12 ns
■ Low Active Power ❐ ICC = 250 mA at 12 ns
■ Low CMOS Standby Power ❐ ISB2 = 50 mA
■ Operating Voltages of 3.3 ± 0.3 V
■ 2.0 V Data Retention
■ Automatic Power Down when D |
Cypress Semiconductor |
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| 2 | CY7C107B | 1M x 1 Static RAM 07B
CY7C107B CY7C1007B
1M x 1 Static RAM
Features
• High speed — tAA = 12 ns • CMOS for optimum speed/power • Automatic power-down when deselected • TTL-compatible inputs and outputs Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data |
Cypress Semiconductor |
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