Datasheet CY7C1049B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
4	CY7C1049B	512K x 8 Static RAM 049B CY7C1049B 512K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 1320 mW (max.) • Low CMOS standby power (Commercial L version) — 2.75 mW (max.) • 2.0V Data Retention (400 µW at 2.0V retention) • Automatic power-down when deselected	Cypress Semiconductor
3	CY7C1049BN	512K x 8 Static RAM 512 K × 8 Static RAM Features ■ High speed ❐ tAA = 17 ns ■ Low active power ❐ 1073 mW (max.) ■ Low CMOS standby power ❐ 2.75 mW (max.) ■ 2.0 V data retention (400 W at 2.0 V retention) ■ Automatic power-down when deselected ■ TTL-compatible inputs and outputs ■ Easy memory ex	Cypress Semiconductor
2	CY7C1049BNV33	512K x 8 Static RAM CY7C1049BNV33 512K x 8 Static RAM Features • High speed — tAA = 12 ns • Low active power — 504 mW (max.) Functional Description[1] The CY7C1049BNV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an activ	Cypress Semiconductor
1	CY7C1049BV33	512K x 8 Static RAM 049BV33 CY7C1049BV33 512K x 8 Static RAM Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660 µW at 2.0V retention) • Automatic power-down when deselect	Cypress Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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