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Datasheet CY62157E Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | CY62157E | 8-Mbit (512 K x 16) Static RAM CY62157E MoBL®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
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Very high speed: 45 ns ❐ Industrial: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C Wide voltage range: 4.5 V–5.5 V Ultra low standby power ❐ Typical standby current: 2 A ❐ Maximu |
Cypress Semiconductor |
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3 | CY62157ESL | 8-Mbit (512 K x 16) Static RAM CY62157ESL MoBL
8-Mbit (512K x 16) Static RAM
Features
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Very high speed: 45 ns Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current: 8 A Ultra low active power ❐ Typical active current: 1.8 |
Cypress Semiconductor |
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2 | CY62157EV18 | 8-Mbit (512 K x 16) Static RAM CY62157EV18 MoBL®
8-Mbit (512K x 16) Static RAM
8-bit (512K x 16) Static RAM
Features
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Very high speed: 55 ns Wide voltage range: 1.65 V–2.25 V Pin compatible with CY62157DV18 and CY62157DV20 Ultra low standby power ❐ Typical Standby current: 2 A ❐ Maximum Standby current |
Cypress Semiconductor |
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1 | CY62157EV30 | 8-Mbit (512 K x 16) Static RAM CY62157EV30 MoBL®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
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Functional Description
The CY62157EV30 is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current |
Cypress Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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