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CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 μA ❐ Maximum standby current: 8.7 μ
CY62148DV30 4-Mbit (512 K × 8) MoBL® Static RAM 4-Mbit (512 K × 8) MoBL® Static RAM Features ■ Temperature Ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ❐ Wide voltage range: 2.20 V–3.60 V ■ Pin-compatible with CY62148CV25, CY62148CV30 and CY62148CV33 ■ Ult
CY62148ESL MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ Functional Description The CY62148ESL is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. Th
MoBL CY62148V MoBL™ 512K x 8 MoBL Static RAM Features • Low voltage range: — 2.7V–3.6V • Ultra low active power • Low standby power • TTL-compatible inputs and outputs • Automatic power-down when deselected • CMOS for optimum speed/power The device can be put into standby mode wh
CY62148E MoBL® 4-Mbit (512 K × 8) Static RAM 4-Mbit (512 K × 8) Static RAM Features ■ ■ ■ ■ Functional Description The CY62148E is a high performance CMOS static RAM organized as 512 K words by 8-bits. This device features advanced circuit design to provide ultra low active current. Th
1CY 621 48 fax id: 1079 PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-co
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