Datasheet CY62147CV18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	CY62147CV18	256K x 16 Static RAM CY62147CV18 MoBL2™ 256K x 16 Static RAM Features • High speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V−1.95V • Pin-compatible w/ CY62147BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • • • • — Typical Active Current: 2 mA @	Cypress Semiconductor	data

CY6 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	CY6116A	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
2	CY6116A-20PC	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
3	CY6116A-25DMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
4	CY6116A-25LMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
5	CY6116A-25PC	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
6	CY6116A-35DMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data
7	CY6116A-35LMB	2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993 Features D D D D D D D Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect	Cypress Semiconductor	data

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Número de pieza	Descripción	Fabricantes	PDF
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