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PROCESS 5 Volt TVS Chip CPZ40X Transient Voltage Suppressor PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 13.4 x 13.4 MILS 5.5 MILS 3.9 x 6.7 MILS Al - 30,000Å Au - 9,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 122,493 PRINCIPAL DEVIC
PROCESS 5.0 Volt TVS Chip CPZ36R Transient Voltage Suppressor PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL
PROCESS 3.3 Volt TVS Chip CPZ35R Transient Voltage Suppressor PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Area Top Side Metalization Back Side Metalization 10.2 x 10.2 MILS 3.9 MILS 7.1 MILS DIAMETER Al - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 163,034 PRINCIPAL
PROCESS 12 Volt TVS Chip CPZ37R Transient Voltage Suppressor PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 6.7 x 6.7 MILS 3.54 MILS 4.3 x 4.3 MILS Al - 13,000Å Au-As/Ag - 13,000Å/6,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 368,512 PR
PROCESS CPZ33R Transient Voltage Suppressor 12 Volt Quad TVS Chip PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Areas (4) Top Side Metalization Back Side Metalization 14.2 x 14.2 MILS 3.9 MILS 4.7 MILS DIAMETER EACH Al - 13,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 84,
PROCESS CPZ39R Transient Voltage Suppressor 5 Volt Quad TVS Chip PROCESS DETAILS Die Size Die Thickness Cathode Bonding Pad Areas (4) Top Side Metalization Back Side Metalization 11 x 11 MILS 3.94 MILS 3.54 MILS DIAMETER EACH Al - 30,000Å Au - 9,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 140,490
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