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PROCESS CPQ165 TRIAC 25 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 376 PRINCIPAL DEVICE TYPES CQDD-25M Series CQ220-25M Seri
Central TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS ± 0.6 M
Central TM PROCESS CPQ110 Triac Semiconductor Corp. 8.0 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 110 MILS x 110 MILS 8.6 MILS ± 0.6
Central TM PROCESS CPQ150 Triac Semiconductor Corp. 16 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 150 MILS x 150 MILS 8.6 MILS ± 0.6 M
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