파트넘버.co.kr CPD107 데이터시트 검색

CPD107 전자부품 데이터시트



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기능 검색 결과



CPD107  

centralsemi
centralsemi

CPD107

3 Amp Schottky Rectifier Chip

PROCESS Schottky Rectifier CPD107 3 Amp Schottky Rectifier Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 56 x 56 MILS 11.8 MILS 51 x 51 MILS Al - 30,000Å Ag - 20,000Å GEOMETRY GROSS DIE P




관련 부품 CPD1 상세설명

CPD1ExxV  

  
Bidirectional ESD / Transient Suppressor

Bidirectional ESD / Transient Suppressor CPD Series (RoHS Device) Features (16kV) IEC 61000-4-2 rating Surface mount package High component density -VBD 0V +VBD Applications ESD suppression Transient suppression Automotive CAN Bus Circuit Schematic Package W d 1E, U W L P L



Comchip Technology
Comchip Technology

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CPD17  

  
Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip

PROCESS Ultra Fast Rectifier CPD17 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 88 x 88 MILS 14 MILS 69 x 69 MILS Ni/Au - 5,000Å/2,000Å Ni/Au -



Central Semiconductor
Central Semiconductor

PDF



CPD16  

  
Ultra Fast Rectifier 1 Amp Glass Passivated Rectifier Chip

PROCESS Ultra Fast Rectifier CPD16 1 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 51 x 51 MILS 14 MILS 34 x 34 MILS Ni/Au - 5,000Å/2,000Å Ni/Au -



Central Semiconductor
Central Semiconductor

PDF



CPD18  

  
Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip

PROCESS Ultra Fast Rectifier CPD18 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 100 x 100 MILS 14 MILS 78 x 78 MILS Ni/Au - 5,000Å/2,000Å Ni/Au



Central Semiconductor
Central Semiconductor

PDF



CPD15  

  
500mA Glass Passivated Rectifier Chip

PROCESS Ultra Fast Rectifier CPD15 Central TM 500mA Glass Passivated Rectifier Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 25 x 25 MILS 9.5 MILS 14.5 x 14.5 MILS Au - 5,000Å



Central Semiconductor
Central Semiconductor

PDF



CPD109R  

  
Low VFSchottky Diode Chip

PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization 8.3 x 8.3 MILS 3.9 MILS 5.4 x 5.4 MILS Al - 20,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 251,364 PRINCIPAL DEVICE TYP



centralsemi
centralsemi

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