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CM100DU-12F  

Powerex Power Semiconductors
Powerex Power Semiconductors

CM100DU-12F

Trench Gate Design Dual IGBTMOD 100 Amperes/600 Volts

CM100DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD™ 100 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M




관련 부품 CM100DU-1 상세설명

CM100DU-12H  

  
Dual IGBTMOD 100 Amperes/600 Volts

CM100DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 100 Amperes/600 Volts TC Measured Point E A B F G E2 H J U C1 D G2 G2 CM C2E1 C G1 E1 K 2 - Mounting Holes (6.5 Dia.) V L 3-M5 Nuts O M O Q N 0.110 - 0.5 Ta



Powerex Power Semiconductors
Powerex Power Semiconductors

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CM100DU-12H  

  
HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE TC Measured Point E F G E2 A B H J D C G1 E1 G2 G2 U C1 3-M5 Nuts O P O Q CM C2E1 K 2 - Mounting Holes (6.5 Dia.) V L M N TAB#110 t=0.5 P S R T E2 G2 Description: Mitsubishi IGBT Modules are designed for use in



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

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