CM100DU-12F
Powerex Power Semiconductors
Trench Gate Design Dual IGBTMOD 100 Amperes/600 VoltsCM100DU-12F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
N
P - NUTS (3 PLACES) TC MEASURING POINT A D
Q (2 PLACES)
E
E2G2
CM
C2E1
E2
C1
F
G
B
H
G1E1
F
M
CM100DU-12H
Dual IGBTMOD 100 Amperes/600 VoltsCM100DU-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™ U-Series Module
100 Amperes/600 Volts
TC Measured Point
E
A B F G
E2 H
J
U
C1
D
G2 G2
CM
C2E1
C
G1 E1
K
2 - Mounting Holes (6.5 Dia.)
V
L
3-M5 Nuts
O
M
O Q
N
0.110 - 0.5 Ta
Powerex Power Semiconductors
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CM100DU-12H
HIGH POWER SWITCHING USE INSULATED TYPEMITSUBISHI IGBT MODULES
CM100DU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
TC Measured Point
E F G E2 A B H J D C
G1 E1 G2 G2
U C1
3-M5 Nuts O P O Q
CM
C2E1
K
2 - Mounting Holes (6.5 Dia.)
V
L M N TAB#110 t=0.5 P S
R
T
E2 G2
Description: Mitsubishi IGBT Modules are designed for use in
Mitsubishi Electric Semiconductor
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