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Datasheet CJQ4438 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CJQ4438 | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4438 N-Channel MOSFET
V(BR)DSS
60 V
RDS(on)MAX
22mΩ@10V 36mΩ@4.5V
ID
8.2A
SOP8
FEATURE z TrenchFET Power MOSFET z Low R DS(on) z Low Gate Charge
MARKING
APPLICATION z Load Switch z PWM applications
E |  JCET | mosfet |
CJQ Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CJQ05N10 | Dual N-channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ05N10 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
100V
140mΩ@10V
5A
DESCRIPTION
The CJQ05N10 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge .This JCET mosfet | | |
| 2 | CJQ07N10 | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ07N10 N-Channel Power MOSFET
DESCRIPTION
The device is the highest performance trench N-ch MOSFETs with extreme
high cell density , which provide excellent RDSON and gate charge for most of
the synchronous buck JCET mosfet | | |
| 3 | CJQ08N02K | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ08N02K N-Channel Power MOSFET
DESCRIPTION
The device uses advanced trench technology to provide excellent RDS(ON),
SOP8
low gate charge and operation with gate voltages as low as 1.8V. This device is
suitable JCET mosfet | | |
| 4 | CJQ4406 | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4406 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
12mΩ@10V
30 V 16mΩ@4.5V
ID
10A
DESCRIPTION
The CJQ4406 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This devi JCET mosfet | | |
| 5 | CJQ4407 | P-Channel Power MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4407 P-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
-30 V
13mΩ@-10V 17mΩ@-6V
ID
-12A
SOP8
DESCRIPTION The CJQ4407 combines advanced trench MOSFET technology
with a low resistance package to provide e JCET mosfet | | |
| 6 | CJQ4410 | N-Channel Power MOSFET, Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4410 N-Channel Power MOSFET
V(BR)DSS
30V
RDS(on)MAX
13.5mΩ@10V 20mΩ@ 4.5 V
ID
7.5A
DESCRIPTION
The CJQ4410 uses advanced trench technology to provide excellent
RDS(ON), shoot-through immunity, JCET mosfet | | |
| 7 | CJQ4435 | P-Channel Power MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4435 P-Channel Power MOSFET
V(BR)DSS
-30V
RDS(on)MAX
24mΩ@ -10V 35mΩ@ -4.5V
ID
-9.1A
DESCRIPTION The CJQ4435 uses advanced trench technology to provide excellent
RDS(on), shoot-through immunity, body JCET mosfet | |
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| Número de pieza | Descripción | Fabricantes | |
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