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Datasheet CJM1206-G Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CJM1206-G   P-Channel MOSFET

MOSFET CJM1206-G (P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS -12V RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A Features - P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge DFNWB2*2-6L-J
Comchip
Comchip		 datasheet CJM1206-G pdf

CJM120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CJM1206

P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J V(BR)DSS -12V RDS(on)MAX 45 mΩ@-4.5V  60 mΩ@-2.5V 90 mΩ@-1.8V ID -6A  1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN DESCRI
 JCET
JCET		 datasheet pdf - JCET
CJM1208

P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CJM1208 P-Channel MOSFET V(BR)DSS -12V RDS(on)MAX 28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V ID -8A DFNWB2×2-6L-J FEATURE  Advanced trench MOSFET process
JCET
JCET		 datasheet pdf - JCET
CJM1206-G

P-Channel MOSFET

MOSFET CJM1206-G (P-Channel ) RoHS Device Comchip SMD Diode Specialist V(BR)DSS -12V RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V ID -6A Features - P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate ch
 Comchip
Comchip		 datasheet pdf - Comchip


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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