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Datasheet CJM1206 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CJM1206 | P-Channel Power MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS
CJM1206 P-Channel Power MOSFET
DFNWB2*2-6L-J
V(BR)DSS
-12V
RDS(on)MAX
45 mΩ@-4.5V 60 mΩ@-2.5V 90 mΩ@-1.8V
ID
-6A
1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN
DESCRIPTION The CJM1206 us |
 JCET |
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| 1 | CJM1206-G | P-Channel MOSFET MOSFET
CJM1206-G (P-Channel )
RoHS Device
Comchip SMD Diode Specialist
V(BR)DSS -12V
RDS(on)MAX 45mΩ @ -4.5V 60mΩ @ -2.5V 90mΩ @ -1.8V
ID -6A
Features
- P-Channel -12V(D-S) power MOSFET - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge
DFNWB2*2-6L-J
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 Comchip |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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