CJD04N65A 전자부품 데이터시트

CJD04N65 TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desi

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX   3.0Ω@10V ID 4A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recov

CJD04N60A TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Des

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60A N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX   3.0Ω@10V ID 4A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX   3.0Ω@10V ID 4A TO-251S   General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode a