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Datasheet CJD04N60B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | CJD04N60B | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
3.0Ω@10V
ID
4A
TO-251S
General Description
This advanced high voltage MOSFET is designed to wighstand high
1. GATE 2. DRAIN
energy in |
JCET |
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1 | CJD04N60B | N-Channel Power MOSFET / Transistor CJD04N60B
TO-251S Plastic-Encapsulate MOSFETS
CJD04N60B 600V N-Channel Power MOSFET
General Description This advanced high voltage MOSFET is designed to wighstand high
energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recov |
ZPSEMI |
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Número de pieza | Descripción | Fabricantes | |
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