Datasheet CJ818B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CJ818B	PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-6L Plastic-Encapsulate Transistors CJ818B TRANSISTOR (PNP) DESCRIPTIONS The device is manfactured in low voltage PNP Planar Technology with “Base Island ” layout. The resulting Transistor shows exceptional high gain performance coupled wi	JCST

CJ8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CJ8820	Dual N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 V(BR)DSS 20V Dual N-Channel MOSFET RDS(on)MAX 21mΩ@10V 24mΩ@4.5V 28mΩ@3.8V 32mΩ@2.5V 50mΩ@1.8V ID 7A DESCRIPTION The CJ8820 uses advanced trench technology to provide excell	JCET
CJ8820	N-Channel Enhancement Mode Field Effect Transistor CJ8820 SOT-23 Plastic-Encapsulate MOSFETS CJ8820 N-Channel Enhancement Mode Field Effect Transistor DESCRIPTION The CJ8820 use advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional	ZPSEMI
CJ8810	N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8810 N-Channel MOSFET V(BR)DSS 20V RDS(on)MAX 26mΩ @10V 27mΩ @4.5V 30 mΩ@3.8V 33mΩ @2.5V 45mΩ @1.8V FEATURE z Surface Mount Package z Low R DS(on) z ESD Protected Gate MARKING	JCET

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Número de pieza	Descripción	Fabricantes	PDF
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