CJ3401A
JCST
MOSFETSJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current cap
CJ3401A
ZPSEMI
P-Channel Enhancement Mode Field Effect TransistorCJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE 2. S