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Datasheet CJ3401 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | CJ3401 | P-Channel Enhancement Mode MOSFET CJ3401
Feature
-30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
Super High dense cell design for extremely low RDS(ON) Reliable and Rugged
SOT-23 for Surface Mount Package
P-Channel Enhancement Mode MOSFET
Applicatio |
 ZPSEMI |
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| 4 | CJ3401 | MOSFETS JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401 P-Channel Enhancement Mode Field Effect Transistor
SOT-23
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1
D
1. GATE |
 JCST |
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| 3 | CJ3401-HF | MOSFET ( Transistor ) MOSFET
CJ3401-HF (P-Channel )
Reverse Voltage: - 30 Volts Forward Current: - 4.2 A RoHS Device Halogen Free
Features
-P-Channel -High dense cell design for extremely low RDS(ON) -Exceptional on-resistance and miximum DC current capability.
Mechanical data
-Case: SOT-23, molded plastic. -Terminals: s |
 Comchip |
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| 2 | CJ3401A | P-Channel Enhancement Mode Field Effect Transistor CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
G
D S
Maximum ratings |
ZPSEMI |
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