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Datasheet CJ3400A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CJ3400A | N-Channel MOSFET JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
V(BR)DSS
30 V
RDS(on)MAX
32mΩ@10V 38mΩ@4.5V
45mΩ@2.5V
ID
5.8A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
FEATURE
APPLICATION
z High dense cell |
 JCET |
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| 1 | CJ3400A | N-Channel Enhancement Mode Field Effect Transistor CJ3400A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3400A N-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON) z Exceptional on-resistance and maximum DC current capability
MARKING: R0A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
Maximum ratings ( Ta=25� |
 ZPSEMI |
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