CJ3139KDW-G
Comchip
MOSFET ( Transistor )MOSFET
CJ3139KDW-G (Dual P-Channel )
RoHS Device
Comchip SMD Diode Specialist
V(BR)DSS
RDS(on)MAX
520mΩ @ -4.5V
-20V
700mΩ @ -2.5V
950mΩ(TYP) @ -1.8V
ID -0.66A
Features
- High-side switching - Low on-resistance - Low threshold - Fast switching spee
CJ3139KDW
MOSFETSJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independentl
JCST
PDF
CJ3139KDW
Dual P-Channel Power MOSFETCJ3139KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the RDS(ON). Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE z High-Side Swit
ZPSEMI
PDF